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BD646

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD646

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A

TRSYS

Transys Electronics

BD646

NPN SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BD646

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD646

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) ?HighDCCurrentGain:hFE=750(Min)@IC=-3A ?LowSaturationVoltage ?ComplementtoTypeBD645 APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD646

Silicon PNP Power Transistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD646

SILICON DARLINGTON POWER TRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD646

PNP SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BD646

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

BD646

SILICON DARLINGTON POWER TRANSISTORS

COMSET

Comset Semiconductor

晶體管資料

  • 型號(hào):

    BD646

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+Darl+Di

  • 性質(zhì):

    低頻或音頻放大(LF)_功率放大(L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    45V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BD698,BD898,BDW74A,BDX34A,BDX54A,FC50B,

  • 最大耗散功率:

    62.5W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-10

  • vtest:

    45

  • htest:

    999900

  • atest:

    8

  • wtest:

    62.5

詳細(xì)參數(shù)

  • 型號(hào):

    BD646

  • 功能描述:

    達(dá)林頓晶體管 62.5W PNP Silicon

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHILIPS
2016+
TO220
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢(xún)價(jià)
PERICOM
24+/25+
50
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢(xún)價(jià)
ST/進(jìn)口原
17+
TO-220
6200
詢(xún)價(jià)
BOURNS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
NXP
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢(xún)價(jià)
POWER
23+
TO-220
25000
專(zhuān)做原裝正品,假一罰百!
詢(xún)價(jià)
P
23+
TO-220
80
詢(xún)價(jià)
2000
40
詢(xún)價(jià)
ST
20+
TO-220
38560
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢(xún)價(jià)
NEXPERIA/安世
23+
LL34
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢(xún)價(jià)
更多BD646供應(yīng)商 更新時(shí)間2025-3-29 14:23:00