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IRF744

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRF744

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF744PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRF744PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI744G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI744G

PowerMOSFET(Vdss=450V,Rds(on)=0.63ohm,Id=4.9A)

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-ind

IRF

International Rectifier

IRFI744GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI744GPBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-ind

IRF

International Rectifier

KBK-744

BI-DIRECTIONALCOUPLERS

BI-DIRECTIONALCOUPLERS

SYNERGY

Synergy Microwave Corporation

KCK-744

BI-DIRECTIONALCOUPLERS

BI-DIRECTIONALCOUPLERS

SYNERGY

Synergy Microwave Corporation

晶體管資料

  • 型號:

    BD744C

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    110V

  • 最大電流允許值:

    15A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD546,BD712,BD912,3CK108D,

  • 最大耗散功率:

    90W

  • 放大倍數(shù):

  • 圖片代號:

    B-10

  • vtest:

    110

  • htest:

    999900

  • atest:

    15

  • wtest:

    90

詳細(xì)參數(shù)

  • 型號:

    BD744C

  • 功能描述:

    兩極晶體管 - BJT 90W PNP Silicon

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
19+
TO-220
12548
詢價
24+
TO-220
10000
全新
詢價
ST
23+
TO-220
6500
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
詢價
ST
17+
TO-220
6200
詢價
BOURNS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
FSC
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價
ST
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD/仙童
22+
TO-220
6000
十年配單,只做原裝
詢價
更多BD744C供應(yīng)商 更新時間2025-4-9 10:20:00