零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SMDCrystalOscillators | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
SMDCrystalOscillators | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
SMDCrystalOscillators | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
DIASURGESUPPRESSOR(DSS) ■Features ●Surgeprotectionfortelephonelines.(telephone,modem,facsimileetc.) ●Surgeprotectionfortelecommunicationlines.(computeretc.) ●SomemodelsarerecognizedbyUL. | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypeAvailable(DXT651) ?IdeallySuitedforAutomatedAssemblyProcesses ?IdealforMediumPowerSwitchingorAmplificationApplications ?LeadFreeByDesign/RoHSCompliant(Note1) ?GreenDevice(Note2) | DIODES Diodes Incorporated | DIODES | ||
60VPNPLOWSATURATIONPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEO>-60V ?IC=-3AHighContinuousCollectorCurrent ?ICMupto-6APeakPulseCurrent ?2WPowerDissipation ?ComplementaryPNPType:DXT651Q ?T | DIODES Diodes Incorporated | DIODES | ||
LOWVCEPNPSURFACEMOUNTTRANSISTOR Features ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypeAvailable(DZT651) ?IdeallySuitedforAutomatedAssemblyProcesses ?IdealforMediumPowerSwitchingorAmplificationApplications ?LeadFreeByDesign/RoHSCompliant(Note1) ?“Green”Device(Note2) | DIODES Diodes Incorporated | DIODES | ||
ESD751andESD76124-V1-ChannelESDProtectionDiodes 1Features ?IEC61000-4-2level4ESDprotection: –±22-kVor±15-kVcontactdischarge –±22-kVor±15-kVair-gapdischarge ?Robustsurgeprotection: –IEC61000-4-5(8/20μs):2.8Aor1.8A ?24-Vworkingvoltage ?BidirectionalESDprotection ?Lowclampingvoltageprotectsdownstream | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
ESD1LIN24-Q1,ESD751-Q1,andESD761-Q1Automotive24-V,1-ChannelESDProtectionDiodesforIn-VehicleNetworks 1Features ?IEC61000-4-2level4ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?ISO10605(330pF,330Ω)ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?24-Vworkingv | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
ESD1LIN24-Q1,ESD751-Q1,andESD761-Q1Automotive24-V,1-ChannelESDProtectionDiodesforIn-VehicleNetworks 1Features ?IEC61000-4-2level4ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?ISO10605(330pF,330Ω)ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?24-Vworkingv | TITexas Instruments 德州儀器美國德州儀器公司 | TI |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
低頻或音頻放大 (LF)_功率放大 (L)
- 封裝形式:
直插封裝
- 極限工作電壓:
100V
- 最大電流允許值:
20A
- 最大工作頻率:
>4MHZ
- 引腳數(shù):
2
- 可代換的型號:
BD317,2N5629,2N5630,2N5631,2SC2608,
- 最大耗散功率:
200W
- 放大倍數(shù):
- 圖片代號:
E-44
- vtest:
100
- htest:
4000100
- atest:
20
- wtest:
200
詳細參數(shù)
- 型號:
BD751
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
harris |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢 |
詢價 | ||
N/A |
23+ |
SMD |
5177 |
現(xiàn)貨 |
詢價 | ||
23+ |
20000 |
正品原裝貨價格低 |
詢價 | ||||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
INTEL |
1229+ |
BGA |
559 |
詢價 | |||
INTEL |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
INT |
23+ |
NA |
1215 |
專做原裝正品,假一罰百! |
詢價 | ||
INTEL |
23+ |
BGA |
1 |
實數(shù)量1片原裝環(huán)保房間現(xiàn)貨假一賠十 |
詢價 | ||
INTEL |
1822+ |
BGA |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 |