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BFR181T

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TF

SiliconNPNPlanarRFTransistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181W

NPNSiliconRFTransistor)Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFR181W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads ?Qualificationreport

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFY181

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    BDY181

  • 功能描述:

    NPN Silicon Transistors. Diffused MESA

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24+
TO-3
10000
全新
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PHI
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
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PHI
23+
TO-3
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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PHI
23+
TO-3
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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PHILIPS
24+/25+
20
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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23+
TO-3
10000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳
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sie
24+
500000
行業(yè)低價(jià),代理渠道
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ST
24+
NA
200000
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ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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MOT
23+
2腳鐵帽
5000
原裝正品,假一罰十
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更多BDY181供應(yīng)商 更新時(shí)間2025-4-6 16:00:00