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BF997

N-channel dual-gate MOS-FET

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource ?Integrateddrainresistancetosuppre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF997

Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)

SiliconNChannelMOSFETTetrode ●IntegratedsuppressionnetworkagainstspuriousVHFoscillations ●ForVHFapplications,especiallyinTVtunerswithextendedVHFband,e.g.inCATVtuners

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF998

Marking:MO;Package:SOT-143;N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF998

Marking:MO;Package:SOT-143;Silicon N-Channel MOSFET Tetrode

SiliconN_ChannelMOSFETTetrode ?Short-channeltransistorwithhighS/Cqualityfactor ?Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BF998

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998R

Marking:MOR;Package:SOT-143R;N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998R

Marking:MOR;Package:SOT-143R;Silicon N-Channel MOSFET Tetrode

SiliconN_ChannelMOSFETTetrode ?Short-channeltransistorwithhighS/Cqualityfactor ?Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    BF9

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NXP/恩智浦
23+
SOT143
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
PHI
24+
SOT-143
9000
詢價(jià)
PHILIPS
23+
SOT-143
6680
全新原裝優(yōu)勢(shì)
詢價(jià)
NXP
24+
SOT-143
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
NXP
1742+
SOT143
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
詢價(jià)
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價(jià)
NEXPERIA
23+
SOT-143
63000
原裝正品現(xiàn)貨
詢價(jià)
NXP
20+
SOT143
49000
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
NXP/恩智浦
23+
SOT-143
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
NXP/恩智浦
23+
393000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳
詢價(jià)
更多BF9供應(yīng)商 更新時(shí)間2025-4-21 16:55:00