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BFY183

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY183ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH183

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BLF183XR

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BLF183XRS

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

詳細(xì)參數(shù)

  • 型號：

    BFP183TW

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Silicon NPN Planar RF Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
SOT-343
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
INFINEON
23+
SOT343
63000
原裝正品現(xiàn)貨
 詢價
VISHAY/威世
22+
SOT343
25000
只有原裝原裝,支持BOM配單
 詢價
INFINEON
23+
SOT343
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
SOT343
7000
詢價
原裝VISHAY
24+
SOT-343
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
VISHAY/威世
23+
SOT-343
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
23+
19012
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
VISHAY
ROHS
56520
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
VISHAY/威世
25+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
更多BFP183TW供應(yīng)商 更新時間2025-4-1 17:47:00

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