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BFP196W

NPNSiliconRFTransistor

NPNSiliconRFTransistor* ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz,F=1.3dBat900MHz ?Pb-free(RoHScomp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W

NPNSiliconRFTransistor(Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunications)

NPNSiliconRFTransistor ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz F=1.5dBat900MHz

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFP196W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W

iscSiliconNPNRFTransistor

DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz ?HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz ?MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS ?Designedforuseinlownoise

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFP196WN

LownoisesiliconbipolarRFtransistor

Productdescription ?NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlownoise,highgainamplifiersupto2GHz.)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=3dBat2GHz ?ESAQualificationpending

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFY196

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BFP196R

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    Trans GP BJT NPN 12V 0.1A 4-Pin(3+Tab) SOT-143R T/R

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon
19+
SOT-143
20000
詢(xún)價(jià)
INFINEON/英飛凌
24+
SOT143
45000
熱賣(mài)優(yōu)勢(shì)現(xiàn)貨
 詢(xún)價(jià)
INFINEON/英飛凌
24+
SOT143
163000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
 詢(xún)價(jià)
INFINEON
24+
SOT-143SOT-23-4
30200
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
INF
23+
SOT143
7936
詢(xún)價(jià)
INFINEON
2016+
SOT143
9000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢(xún)價(jià)
INFINEON
1742+
SOT143
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢(xún)價(jià)
INFINEON
18+
SOT-143
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢(xún)價(jià)
INF
2020+
SOT-143
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
INF
21+
SOT-143
16510
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
更多BFP196R供應(yīng)商 更新時(shí)間2025-4-2 10:20:00

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