BFP640F分立半導體產品的晶體管-雙極（BJT）-射頻規(guī)格書PDF中文資料

BFP640F屬于分立半導體產品的晶體管-雙極（BJT）-射頻。由英飛凌科技股份公司制造生產的BFP640F晶體管 - 雙極（BJT）- 射頻雙極型射頻晶體管是一種具有三個端子的半導體器件，用于在涉及射頻的設備中開關或放大信號。雙極結型晶體管設計為 NPN 或 PNP，特征參數包括晶體管類型、集射極擊穿電壓、躍遷頻率、噪聲系數、增益、功率、DC 電流增益和集電極電流。

Product Brief

The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Features

? Linear low noise amplifier based on Infineon′s reliable,

high volume SiGe:C technology

? High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA

? High transition frequency fT = 42 GHz @ 3 V, 30 mA

? NFmin = 0.75 dB @ 3.5 GHz, 3 V, 6 mA

? Maximum power gain Gma = 16.5 dB @ 3.5 GHz, 3 V, 25 mA

? Low power consumption, ideal for mobile applications

? Very common as GPS low noise amplifier, see respective

application notes on Infineon internet page

? Easy to use Pb-free (RoHS compliant) and halogen-free

standard package with visible leads

? Qualification report according to AEC-Q101 available

Applications

As Low Noise Amplifier (LNA) in

? Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB

? Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth

? Multimedia applications such as mobile/portable TV, CATV, FM Radio

? 3G/4G UMTS/LTE mobile phone applications

? ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer, amplifier in VCOs and buffer amplifier