BFP740分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-射頻規(guī)格書PDF中文資料

BFP740屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-射頻。由英飛凌科技股份公司制造生產(chǎn)的BFP740晶體管 - 雙極（BJT）- 射頻雙極型射頻晶體管是一種具有三個(gè)端子的半導(dǎo)體器件，用于在涉及射頻的設(shè)備中開關(guān)或放大信號(hào)。雙極結(jié)型晶體管設(shè)計(jì)為 NPN 或 PNP，特征參數(shù)包括晶體管類型、集射極擊穿電壓、躍遷頻率、噪聲系數(shù)、增益、功率、DC 電流增益和集電極電流。

Product Brief

The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 11 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

Features

? Very low noise amplifier based on Infineon′s reliable,

high volume SiGe:C technology

? OIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mA

? High transition frequency fT = 44 GHz @ 3 V, 25 mA

? NFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mA

? Maximum power gain Gms = 19.5 dB @ 5.5 GHz, 3 V, 15 mA

? Low power consumption, ideal for mobile applications,

very common in WLAN Wi-Fi applications

? Easy to use Pb-free (RoHS compliant) and halogen-free

standard package with visible leads

? Qualification report according to AEC-Q101 available

Applications

As Low Noise Amplifier (LNA) in

? Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth

? Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB

? Multimedia applications such as mobile/portable TV, CATV, FM Radio

? 3G/4G UMTS/LTE mobile phone applications

? ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer, amplifier in VCOs and buffer amplifier