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BFR181TW

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181W

NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR181W

Marking:RFs;Package:SOT-323;NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads ?Qualificationreport

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHz F=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR182

Marking:RGs;Package:SOT-23;NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182

Low Noise Silicon Bipolar RF Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=12V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=10mA

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFR182T

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TF

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TW

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TW

isc Silicon NPN RF Transistor

DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

晶體管資料

  • 型號(hào):

    BFR18

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_TR

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    85V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    90MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BC141,BC489,BC538,BC639,BCX24,BSW63,BSW64,2N3700,2N3701,2SD667,3DG170G,

  • 最大耗散功率:

    0.5W

  • 放大倍數(shù):

  • 圖片代號(hào):

    D-8

  • vtest:

    85

  • htest:

    90000000

  • atest:

    0.5

  • wtest:

    0.5

詳細(xì)參數(shù)

  • 型號(hào):

    BFR18

  • 功能描述:

    Medium Power Amplifiers and Switches

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
24+
28574
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PHILIPS
24+
CAN3
10000
原裝現(xiàn)貨假一罰十
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PHILIPS
專業(yè)鐵帽
CAN3
10000
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SGS
23+
2118
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PHILIPS/飛利浦
專業(yè)鐵帽
CAN3
67500
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PHILIPS/飛利浦
23+
CAN3
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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SGS
23+
原廠封裝
5177
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ST/意法
2023+
8700
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PH/ST/MOT
2023+
CAN
50000
全新原裝現(xiàn)貨
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VISHAY
2020+
SOT23-3
160
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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更多BFR18供應(yīng)商 更新時(shí)間2025-4-4 16:30:00