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C2012

MULTILAYERCERAMICCHIPCAPACITORS

CSeriesGeneral(Upto50V) Features ?Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. ?Amonolithicstructureensuressuperiormechanicalstrengthand reliability. ?LowESLandexcellentfrequency

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

C2012

MultilayerCeramicChipCapacitorsGeneraluse

Features ?Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. ?Amonolithicstructureensuressuperiormechanicalstrengthandreliability. ?High-accuracyautomaticmountingisfacilitatedthroughthemaintenanc

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

C2012

MULTILAYERCERAMICCHIPCAPACITORS

Features ?Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. ?Amonolithicstructureensuressuperiormechanicalstrengthandreliability. ?LowESLandexcellentfrequencycharacteristicsallowforacircuitde

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

C2012

MULTILAYERCERAMICCHIPCAPACITORSCommercialgrade,general(Upto75V)

■SERIESOVERVIEW GeneraltypeCseriesisasurface-mountedcomponent,whichmultilayerdielectricsandinnerelectrodesarestackedalternately.Themonolithic structureensuressuperiormechanicalstrengthandhighreliability.Also,outstandingfrequencycharacteristicssuchaslowESRandlo

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

C2012

HEYCo-molded?LiquidTightBreak-ThruPlugs

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C2012

FeetsofStrength

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C2012

HEYCo-molded?LiquidTightBreak-ThruPlugs

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C2012XXXX

CeramicCapacitorsForGeneralUseSMD

Features ?Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. ?Amonolithicstructureensuressuperiormechanicalstrengthandreliability. ?LowESLandexcellentfrequencycharacteristicsallowforacircuitde

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

CAR2012TE

UniversalinputwithPFCConstantpowercharacteristic2frontpanelLEDs:1-input;2

LINEAGEPOWER

Lineage Power Corporation

CE2012

CeramicChipInductor

BournsBourns Electronic Solutions

伯恩斯

詳細參數(shù)

  • 型號：

    BGA2012

  • 制造商：

    NXP Semiconductors

  • 功能描述：

    BGA2012 1900MHz high linear amplifier

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP/恩智浦
23+
SOT-363
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
PHILIPS
16+
SOT-363
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
PHILIPS
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢價
NXP
23+
NA
5392
專做原裝正品,假一罰百!
 詢價
NEXPERIA
23+
SOT363
63000
原裝正品現(xiàn)貨
 詢價
NXP/恩智浦
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP
22+
SOT-363
6000
十年配單,只做原裝
 詢價
ph
24+
500000
行業(yè)低價,代理渠道
 詢價
NXP
09+
SOT363
20
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NXP
23+
SOT-363
12800
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
更多BGA2012供應(yīng)商 更新時間2025-4-25 15:58:00

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