BGSX22G6U10E6327XTSA1RF/IF射頻/中頻RFID的射頻開關規(guī)格書PDF中文資料

BGSX22G6U10E6327XTSA1屬于RF/IF射頻/中頻RFID的射頻開關。由英飛凌科技股份公司制造生產的BGSX22G6U10E6327XTSA1射頻開關射頻開關產品是用于在多個可用信號路徑之間路由 RF、IF 或微波信號的器件。示例應用包括多天線（分集）接收器中的天線選擇、多模式系統(tǒng)中發(fā)射-接收路徑的選擇，或在發(fā)射和接收信號鏈之間切換天線。

Description

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT oers low

insertion loss even at high frequencies of up to 7.125 GHz, low harmonic generation along with high isolation between RF ports.

In addition, the fast switching speed enables 5G-SRS applications.

The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V to 3.6V.

The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking

capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1mm x

1.5mm and a thickness of 0.60mm.

Features

 High linearity up to 39 dBm peak power

 Low current consumption

 Low insertion loss and high port to port isolation up to 7.125 GHz

 Fast switching speed to enable 5G-SRS applications

 General Purpose Input-Output (GPIO) Interface

 No decoupling capacitors required for typical applications

 Ultra low profile lead-less plastic package (MSL-1, 260 C per IPC/JEDEC

J-STD-20)

 RoHS and WEEE compliant package

Small form factor 1.1mm x 1.5mm