BLA1011S-200R分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

Features and benefits

■ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz,

a supply voltage of 36 V and an IDq of 150 mA:

◆ Load power ≥ 200 W

◆ Gain ≥ 13 dB

◆ Efficiency ≥ 45

◆ Rise time ≤ 50 ns

◆ Fall time ≤ 50 ns

■ High power gain

■ Easy power control

■ Excellent ruggedness

■ Source on mounting flange eliminates DC isolators, reducing common mode

inductance

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.