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BLF6G10-200RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10-45

Power LDMOS transistor

Generaldescription 45WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof920MHzand960MHz,asupplyvoltageof28VandanIDqof350mA: ◆Averageoutputpower=1.0W ◆

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10-45

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10L(S)-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10L-260PBM

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10L-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10L-40BRN

Power LDMOS transistor

Generaldescription 40WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1GHz. Featuresandbenefits ■Typical2-carrierW-CDMAperformanceatfrequenciesof791MHzand821MHz,asupplyvoltageof28VandanIDqof390mA: ◆Averageoutputpower=2.

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10L-40BRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10LS-135R

Power LDMOS transistor

Generaldescription 135WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof950mA: ◆Averageoutputpower=26.5W

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF6G10LS-135RN

Power LDMOS transistor

Generaldescription 135WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof950mA: ◆Averageoutputpower=26.5W

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    BLF

  • 制造商:

    Littelfuse

  • 功能描述:

    Fuse Midget 0.5A 250V Fast 2-Pin Cartridge Holder

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更多BLF供應(yīng)商 更新時(shí)間2025-4-22 13:30:00