BLF4G10-120中文資料飛利浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

General description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Features

■ Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V

and an IDq of 850 mA:

◆ Load power = 48 W (AV)

◆ Gain = 19 dB (typ)

◆ Efficiency = 40 (typ)

◆ ACPR400 = ?61 dBc (typ)

◆ ACPR600 = ?72 dBc (typ)

◆ EVMrms = 1.5 (typ)

■ Easy power control

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (800 MHz to 1000 MHz)

■ Internally matched for ease of use

Applications

■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier

applications in the 800 MHz to 1000 MHz frequency range.