BLF878分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

■ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A:

◆ Peak envelope power load power = 300 W

◆ Power gain = 21 dB

◆ Drain efficiency = 46

◆ Third order intermodulation distortion = ?35 dBc

■ DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A:

◆ Average output power = 75 W

◆ Power gain = 21 dB

◆ Drain efficiency = 32

◆ Third order intermodulation distortion = ?32 dBc (4.3 MHz from center frequency)

■ Integrated ESD protection

■ Advanced flange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ High efficiency

■ Designed for broadband operation (470 MHz to 860 MHz)

■ Excellent reliability

■ Internal input and output matching for high gain and optimum broadband operation

■ Easy power control

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ Communication transmitter applications in the UHF band

■ Industrial applications in the UHF band