BLF8G20LS-400PGV分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Features and benefits

■ Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical)

■ High efficiency

■ Low thermal resistance providing excellent thermal stability

■ Designed for broadband operation

■ Lower output capacitance for improved performance in Doherty applications

■ Designed for low memory effects providing excellent pre-distortability

■ Internally matched for ease of use

■ Integrated ESD protection

■ Design optimized for gull-wing

■ Excellent ruggedness

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to

1995 MHz frequency range