BLM9D2527-09AM分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLM9D2527-09AM屬于分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLM9D2527-09AM晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The BLM9D2527-09AM is a 2-stage 9 W fully integrated Doherty MMIC solution using

Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device,

input splitter and output combiner are integrated in a single package. This multiband

device is perfectly suited as a device in the frequency range from 2496 MHz to 2700 MHz.

Available in LGA outline.

Features and benefits

? Integrated input splitter

? Integrated output combiner

? Very high efficiency

? Designed for broadband operation (frequency 2496 MHz to 2700 MHz)

? Independent control of carrier and peaking bias

? Integrated ESD protection

? Excellent thermal stability

? High power gain, input and output matched to impedance 50 ?

? For RoHS compliance see the product details on the Ampleon website

Applications

? RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA, LTE and NR

small cell base stations in the 2496 MHz to 2700 MHz frequency range