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BSS123W中文資料DIODES數(shù)據(jù)手冊PDF規(guī)格書

BSS123W
廠商型號

BSS123W

功能描述

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件大小

67.49 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 Diodes Incorporated
企業(yè)簡稱

DIODES

中文名稱

Diodes Incorporated官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-7 17:55:00

BSS123W規(guī)格書詳情

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

? Low Gate Threshold Voltage

? Low Input Capacitance

? Fast Switching Speed

? Low Input/Output Leakage

? High Drain-Source Voltage Rating

? Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

? Halogen and Antimony Free. “Green” Device (Note 3)

? Qualified to AEC-Q101 Standards for High Reliability

Applications

? Small Servo Motor Control

? Power MOSFET Gate Drivers

? Switching Applications

產(chǎn)品屬性

  • 型號:

    BSS123W

  • 制造商:

    DIODES

  • 制造商全稱:

    Diodes Incorporated

  • 功能描述:

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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