首頁 >BSS84-7-FMOS>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
P-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
P-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Lead,HalogenandAntimonyFree,RoHSCompliant(Note3) ?GreenDevice(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
TZB-TYB-TUBSeries10-TapHighPerformancePassiveDelays | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND |
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