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BU941ZF3

NPN Epitaxial Planar Transistor

Features ?HighBVCEO ?LowVCE(SAT) ?Highcurrentcapability ?Built-inclampingzener ?Pb-freeleadplatingpackage Applications ?Highruggednesselectronicignitions

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

BU941ZLE3

NPN Epitaxial Planar Transistor

Features ?HighBVCEO ?LowVCE(SAT) ?Highcurrentcapability ?Built-inclampingzener ?Pb-freeleadplatingpackage Applications ?Highruggednesselectronicignitions

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

BU941ZNF3

NPN Epitaxial Planar Transistor

Features ?HighBVCEO ?LowVCE(SAT) ?Highcurrentcapability ?Built-inclampingzener ?Pb-freeleadplatingpackage Applications ?Highruggednesselectronicignitions

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

BU941ZP

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

HIGHVOLTAGEIGNITIONCOILDRIVERNPNPOWERDARLINGTON ■VERYRUGGEDBIPOLARTECHNOLOGY ■BUILTINCLAMPINGZENER ■HIGHOPERATINGJUNCTIONTEMPERATURE ■WIDERANGEOFPACKAGES APPLICATIONS ■HIGHRUGGEDNESSELECTRONICIGNITIONS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BU941ZP3

NPN Epitaxial Planar Transistor

Features ?HighBVCEO ?LowVCE(SAT) ?Highcurrentcapability ?Built-inclampingzener ?Pb-freeleadplatingpackage Applications ?Highruggednesselectronicignitions

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

BU941ZPFI

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

HIGHVOLTAGEIGNITIONCOILDRIVERNPNPOWERDARLINGTON ■VERYRUGGEDBIPOLARTECHNOLOGY ■BUILTINCLAMPINGZENER ■HIGHOPERATINGJUNCTIONTEMPERATURE ■WIDERANGEOFPACKAGES APPLICATIONS ■HIGHRUGGEDNESSELECTRONICIGNITIONS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BU941ZPFI

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3PMLpackage ·DARLINGTON ·Highbreakdownvoltage APPLICATIONS ·Highruggednesselectronicignitions

SAVANTIC

Savantic, Inc.

BU941ZPFI

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3PMLpackage ·DARLINGTON ·Highbreakdownvoltage APPLICATIONS ·Highruggednesselectronicignitions

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BU941ZR3

NPN Epitaxial Planar Transistor

Features ?HighBVCEO ?LowVCE(SAT) ?Highcurrentcapability ?Built-inclampingzener ?Pb-freeleadplatingpackage Applications ?Highruggednesselectronicignitions

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

BU941ZR3-0-UE-S

NPN Epitaxial Planar Transistor

Features ?HighBVCEO ?LowVCE(SAT) ?Highcurrentcapability ?Built-inclampingzener ?Pb-freeleadplatingpackage Applications ?Highruggednesselectronicignitions

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

晶體管資料

  • 型號(hào):

    BU941

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    開關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    500V

  • 最大電流允許值:

    15A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號(hào):

    BUT13,BUT14,BUT15,

  • 最大耗散功率:

    180W

  • 放大倍數(shù):

    β>300

  • 圖片代號(hào):

    E-44

  • vtest:

    500

  • htest:

    999900

  • atest:

    15

  • wtest:

    180

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    BU941

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    剪切帶(CT)

  • 晶體管類型:

    NPN - 達(dá)林頓

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    2V @ 300mA,12A

  • 電流 - 集電極截止(最大值):

    100μA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    300 @ 5A,10V

  • 工作溫度:

    200°C(TJ)

  • 安裝類型:

    底座安裝

  • 封裝/外殼:

    TO-204AA,TO-3

  • 供應(yīng)商器件封裝:

    TO-3

  • 描述:

    TRANS NPN DARL 400V 15A TO3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
TO-3
65400
詢價(jià)
ST
23+/24+
TO-3P
9865
原包原標(biāo)簽100%進(jìn)口原裝可開13%稅
詢價(jià)
ST
1215+
TO220
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
詢價(jià)
24+
TO-3
10000
詢價(jià)
ST
2015+
TO-3
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
ST
24+
原廠封裝
4000
原裝現(xiàn)貨假一罰十
詢價(jià)
STMicro.
23+
TO-3
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
STM
24+
NA
5645
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
ST
23+
TO-247
5000
原裝正品,假一罰十
詢價(jià)
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多BU941供應(yīng)商 更新時(shí)間2025-4-5 14:10:00