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DR314

GERMANIUMDOIDES

GERMANIUMDIODES

AAC

American Accurate Components, Inc.

DR314

GERMANIUMDOIDES

AMMSEMIAmerican Microsemiconductor

美國微半導(dǎo)體有限公司

DTC314T

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號：

    BUP314

  • 功能描述：

    IGBT 晶體管 TRANS IGBT CHIP N-CH 1200V, 52A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
17548
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
 詢價
西門子
TO-218AB
77
絕對全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn)
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INF
24+
3P
159534
明嘉萊只做原裝正品現(xiàn)貨
 詢價
INF
24+
2500
詢價
INFIN
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價
INF
23+
NA
6500
全新原裝假一賠十
 詢價
DIP
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
INFINEO
21+
TO-247
12588
原裝正品,自己庫存 假一罰十
 詢價
INFINEON
12+
TO-3P
2500
原裝現(xiàn)貨/特價
 詢價
更多BUP314供應(yīng)商 更新時間2025-4-7 20:50:00

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