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DR314

GERMANIUMDOIDES

AMMSEMIAmerican Microsemiconductor

美國(guó)微半導(dǎo)體有限公司

DTC314T

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號(hào):

    BUP314D

  • 功能描述:

    IGBT 晶體管 LOW LOSS DuoPack 1200V 25A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
7053
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開(kāi)票。
詢價(jià)
INF
24+
220
詢價(jià)
SIE原碼
23+
TO-218
2000
全新原裝
詢價(jià)
INF
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價(jià)
INF
2020+
TO-3P
999999
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
infineon
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來(lái)電咨詢
詢價(jià)
INFINEO
23+
TO-247
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
INFINEO
21+
TO-247
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
23+
TO-3P
1
詢價(jià)
SIEMENS
24+
TO-3P
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
更多BUP314D供應(yīng)商 更新時(shí)間2025-3-31 15:55:00