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ED603CT

SUPERFASTRECOVERYRECTIFIER(VOLTAGE-200to600VoltsCURRENT-6.0Amperes)

SUPERFASTRECOVERYRECTIFIER VOLTAGE-200to600VoltsCURRENT-6.0Amperes FEATURES ?Forthoroughholeapplications ?Lowprofilepackage ?Built-instrainrelief ?Easypickandplace ?Superfastrecoverytimesforhighefficiency ?PlasticpackagehasUnderwriters

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

ED603CT

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

ED603CT

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

ELM603

1.5A1.5MHzhighefficiencyPWMstepdownDC/DCconverter

ELM

ELM Electronics

ER603

SUPERFASTRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Superfastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadlength, 5lbs.(2.3kg

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

ER603DC

DPAKSURFACEMOUNTSUPERFASTRECTIFIER

FEATURES ●Forsurfacemountedapplications ●Lowprofilepackage ●Built-instrainrelief ●Easypickandplace ●Superfastrecoverytimesforhighefficiency ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ●Glasspassivatedjunction ●Hightemperaturesol

TRSYS

Transys Electronics

FDB603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    BUP603D

  • 制造商：

    Siemens

  • 功能描述：

    42 A, 600 V, N-CHANNEL IGBT, TO-218

供應(yīng)商型號品牌批號封裝庫存備注價格
SIEMENS
24+
TO-218
5000
只做原裝公司現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO-218
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
23+
TO-218-3
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
SML
23+
20000
正品原裝貨價格低
 詢價
INFINEON/英飛凌
24+
NA/
3355
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
INFINEON/英飛凌
23+
TO-218
8000
只做原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO-218
7000
詢價
INFINEON
25+
TO-218
162
原裝正品,假一罰十!
 詢價
CJ
24+
SOT23
60000
公司現(xiàn)貨庫存,支持實單
 詢價
INFINEON/英飛凌
24+
TO-218
60000
全新原裝現(xiàn)貨
 詢價
更多BUP603D供應(yīng)商 更新時間2025-4-26 10:20:00

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