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CEB1012

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB1012

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB1012L

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB1012L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1012

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1012L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP1012

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP1012L

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1012

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1012L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    C1012A

  • 制造商：

    TEKTRONIX

  • 功能描述：

    Special-purpose Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
Pulsar
99
詢價(jià)
TE/泰科
2508+
/
209858
一級(jí)代理，原裝現(xiàn)貨
 詢價(jià)
SUMIDA/勝美達(dá)
23+
SMD
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
2315+
3896
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價(jià)
THOMASBETTS/ANSLEY
新
4440
全新原裝 貨期兩周
 詢價(jià)
2022+
43
全新原裝 貨期兩周
 詢價(jià)
PULSAR
20+
50
每一片來(lái)自原廠!
 詢價(jià)
PHI
23+
原廠封裝
5177
現(xiàn)貨
 詢價(jià)
更多C1012A供應(yīng)商 更新時(shí)間2025-4-6 15:00:00

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