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NE71300

LOWNOISELTOK-BANDGaAsMESFET

CEL

California Eastern Labs

NE71300

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300L

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

LtoKuBANDLOWNOISEAMPLIFIERN-CHANNELGaAsMESFET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300M

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-M

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300-M

LtoKuBANDLOWNOISEAMPLIFIERN-CHANNELGaAsMESFET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300N

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-N

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CAW71300JLF

  • 制造商：

    TT Electronics/IRC

  • 功能描述：

    CAW71300JLF

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IRCTT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
TELEDYNE
專業(yè)鐵帽
3000
原裝鐵帽專營,代理渠道量大可訂貨
 詢價(jià)
TELEDYNE
20+
原裝
67500
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
24+
CAN
1
詢價(jià)
TELEDYNE
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
cmd
24+
500000
行業(yè)低價(jià),代理渠道
 詢價(jià)
SS4
1535+
1400
詢價(jià)
SEOUL
2022+
500
全新原裝 貨期兩周
 詢價(jià)
SEOUL
24+
NA
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
聯(lián)能電子
23+
N/A
5000
傳感器專家,全系列在售
 詢價(jià)
更多CAW71300JLF供應(yīng)商 更新時(shí)間2025-4-26 9:00:00

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