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CDBG830-G

SMD Schottky Barrier Diode

ReverseVoltage:20~60Volts ForwardCurrent:8A Features: ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenviromentalstandardsofMIL-S-19500/228 ?Lo

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEB830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED830A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM830

8USB2.0ports

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

CEP830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CDBG830-G

  • 制造商：

    COMCHIP

  • 制造商全稱：

    Comchip Technology

  • 功能描述：

    SMD Schottky Barrier Diode

供應(yīng)商型號品牌批號封裝庫存備注價格
Comchip Technology
24+
TO-247-3
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
Comchip
20+
SOD-523
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
COMCHIP/典琦科技
23+
SOD-523
6000
專注配單,只做原裝進口現(xiàn)貨
 詢價
COMCHIP/典琦科技
23+
SOD-523
6000
專注配單,只做原裝進口現(xiàn)貨
 詢價
COMCHIP/典琦科技
22+
SOD-523
354000
詢價
COMCHIP/典琦科技
2019+PB
SOD-523
34000
大量供貨-特價
 詢價
COMCHIP/典琦科技
新年份
SOD-523
34000
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實單帶接受價來談!
 詢價
勝美達|Sumida
21+
SMD
12588
原裝正品,大量庫存
 詢價
Comchip
16+
SOT-523
85430
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
 詢價
COMCHIP
23+
SOT-523
63000
原裝正品現(xiàn)貨
 詢價
更多CDBG830-G供應(yīng)商 更新時間2025-2-11 14:43:00

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