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CEB15N60LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
交期準時服務周到
 詢價
CET
TO-263
22+
6000
十年配單,只做原裝
 詢價
CET
23+
TO-263
6000
原裝正品，支持實單
 詢價
CET/華瑞
2022+
TO-263
30000
進口原裝現貨供應,原裝 假一罰十
 詢價
CET
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價
SR
21+
TO251
10026
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
SR
23+
TO251
10000
原裝正品現貨
 詢價
CET
24+
50000
詢價
CET
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
更多CEB15N60LN供應商 更新時間2025-3-21 10:34:00

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