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CEB75N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

HY75N10T

100V/75AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IXFH75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH75N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH75N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH75N10Q

HIPERFETPOWERMOSFETSQCLASS

IXYS

IXYS Corporation

IXFH75N10Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM75N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    CEB75N10

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
C
22+
T0-263
6000
十年配單,只做原裝
 詢價
C
23+
T0-263
6000
原裝正品，支持實單
 詢價
C
22+
T0-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
VB
25+
T0-263
1015
原裝正品,假一罰十!
 詢價
Central
24+
SOP-4
6000
公司現(xiàn)貨庫存,支持實單
 詢價
VBSEMI/臺灣微碧
23+
T0-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET
25+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
VBSEMI/臺灣微碧
24+
T0-263
60000
詢價
VBSEMI/微碧半導(dǎo)體
24+
TO263
7800
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談
 詢價
CET
24+
5000
詢價
更多CEB75N10供應(yīng)商 更新時間2025-4-26 14:01:00

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