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CEN1320-BK

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: ?Motorcontrol ?Loadswitches ?Displaydrives ?Relaydrives FEATURES: ?HighVoltage(140V)?HighThermalEfficiency ?HighCurrent(5.0A)?3x3mmTLM?case ?LowVCE(SAT) (420mVMAX@4.0A)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CEN1320-TR

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: ?Motorcontrol ?Loadswitches ?Displaydrives ?Relaydrives FEATURES: ?HighVoltage(140V)?HighThermalEfficiency ?HighCurrent(5.0A)?3x3mmTLM?case ?LowVCE(SAT) (420mVMAX@4.0A)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CEN1372-BK

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: ?Motorcontrol ?Loadswitches ?Displaydrives ?Relaydrives FEATURES: ?HighVoltage(140V)?HighThermalEfficiency ?HighCurrent(5.0A)?3x3mmTLM?case ?LowVCE(SAT) (420mVMAX@4.0A)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CEN1372-TR

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: ?Motorcontrol ?Loadswitches ?Displaydrives ?Relaydrives FEATURES: ?HighVoltage(140V)?HighThermalEfficiency ?HighCurrent(5.0A)?3x3mmTLM?case ?LowVCE(SAT) (420mVMAX@4.0A)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CEN2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-2.7A,RDS(ON)=110mW@VGS=-4.5V. RDS(ON)=160mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2301A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2306A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2307A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.2A,RDS(ON)=78mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2307B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.7A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=82mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2307BB

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.4A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=108mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+24
TO-18
29850
原裝原盤(pán)原標(biāo).保證每一片都來(lái)自原廠(chǎng)
 詢(xún)價(jià)
ST
2315+
TO-18
3868
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢(xún)價(jià)
ST
21+
TO-18
23480
詢(xún)價(jià)
SOT-23
23+
NA
15659
振宏微專(zhuān)業(yè)只做正品,假一罰百!
 詢(xún)價(jià)
CET
23+
SOT-23-T
63000
原裝正品現(xiàn)貨
 詢(xún)價(jià)
CET/華瑞
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
SK
22+
SOT-23
52800
原裝正品
 詢(xún)價(jià)
CET/華瑞
23+
SOT-23T
294678
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
CET/華瑞
20+
SOT-23
120000
只做原裝 可免費(fèi)提供樣品
 詢(xún)價(jià)
CET/華瑞
22+
SOT-23
50000
只做原裝假一罰十,歡迎咨詢(xún)
 詢(xún)價(jià)
更多CEN供應(yīng)商 更新時(shí)間2025-3-19 11:40:00

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