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CEP3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,105A,RDS(ON)=6.0mW@VGS=10V. RDS(ON)=7.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3070

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,72A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■150V,30A,RDS(ON)=70mΩ@VGS=10V. RDS(ON)=80mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP30N3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP30P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-30A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,47A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,47A,RDS(ON)=12mW@VGS=10V. RDS(ON)=21mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,40A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEP

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
2022+
TO-220
50000
原廠代理 終端免費提供樣品
 詢價
CET
23+
TO-220
6000
原裝正品，支持實單
 詢價
CET/華瑞
2022+
TO-220
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
SR
23+
TO-220
5000
原裝正品,假一罰十
 詢價
MITSUMI
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET/華瑞
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價
CET/華瑞
22+
TO-220
100000
代理渠道/只做原裝/可含稅
 詢價
CET
25+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
CET
23+
TO220/3
7000
絕對全新原裝!100%保質量特價!請放心訂購!
 詢價
CET
24+
TO2203
6734
詢價
更多CEP供應商 更新時間2025-4-22 14:01:00

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