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CEP50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP50N06

50A,60V Heatsink Planar N-Channel Power MOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

CEP50N06G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,50A,RDS(ON)=30mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP50N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,50A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-47A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=32m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP50P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-47A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=32mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CEP5

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
24+
TO-220
156757
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
CET
23+
TO220/3
7000
絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
 詢價(jià)
CET品牌
2016+
TO-220
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
ROHM
23+
TO220
5000
原裝正品,假一罰十
 詢價(jià)
CET
24+
TO2203
150
詢價(jià)
CET
2016+
TO-220
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
CET
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
CET
19+
TO-220
67758
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
CET
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
CET
22+
TO-220
162299
原裝正品現(xiàn)貨,可開13個(gè)點(diǎn)稅
 詢價(jià)
更多CEP5供應(yīng)商 更新時(shí)間2025-2-6 15:40:00

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