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CEB83A3

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP83A3

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,102A,RDS(ON)=4.5mΩ@VGS=10V. RDS(ON)=7.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET/華瑞
24+
TO-252
156788
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET
2016+
TO-252
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
CET
2020+
TO-252
17500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
CET
24+
TO-252
65300
一級(jí)代理/放心購買!
 詢價(jià)
CET
2447
TO-252
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
 詢價(jià)
CET/華瑞
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
C
TO-252
22+
6000
十年配單,只做原裝
 詢價(jià)
CET
TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
C
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多CEU83A3GIC供應(yīng)商 更新時(shí)間2025-2-23 15:40:00

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