CGHV27015S分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

CGHV27015S屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由WOLFSPEED, INC.制造生產(chǎn)的CGHV27015S晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency, high gain

and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,

4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT

device is unmatched so it is suitable for power amplifier applications from

10 MHz through 6000 MHz, such as tactical communications, CATV, UAV data

links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices.

At a VDD of 50 V, the device provide 2.5 W of average power or 15 W of peak

power. At a VDD of 28 V, the device provides 1 W of average power and 7 W

of peak power. The transistor is available in a 3 mm x 4 mm, surface mount,

dualflat-no-lead (DFN) package.

Features for 50 V in CGHV27015S-AMP1

? 2.4 - 2.7 GHz Operation

? 15 W Typical Output Power

? 21 dB Gain at 2.5 W PAVE

? -38 dBc ACLR at 2.5 W PAVE

? 32 efficiency at 2.5 W PAVE

? High degree of APD and DPD correction can be

applied