CGHV35120F中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron

mobility transistor (HEMT)designed specifically with high efficiency,

high gain and wide bandwidth capabilities, which makes the

CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.

The transistor is supplied in a ceramic/metal flange package.

Features

? Rated Power = 120 W @ TCASE = 85°C

? Operating Frequency = 2.9 - 3.8 GHz

? Transient 100 μsec - 300 μsec @ 20 Duty Cycle

? 13 dB Power Gain @ TCASE = 85°C

Large Signal Models Available for ADS and MWO

? 62 Typical Drain Efficiency @ TCASE = 85°C

? Input Matched

?