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IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

IRFP054

N-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=70A@TC=25℃ ?DrainSourceVoltage-:VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054N

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=81A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP054N

N-ChannelMOSFETTransistor

?DESCRITION ?UltraLowOn-resistance ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤12m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP054N

AdvancedProcessTechnology

Description TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole. ●AdvancedProcessTechnology ●Dynamicdv/dt

KERSEMI

Kersemi Electronic Co., Ltd.

IRFP054NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    CH054S

  • 制造商：

    MICROSEMI

  • 制造商全稱(chēng)：

    Microsemi Corporation

  • 功能描述：

    2 AMP SCHOTTKY RECTIFIER DIE

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