| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
DC/DCConverterApplications Features ?LowON-resistance. ?4.0Vdrive. ?Ultrahigh-speedswitching. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI | ||
USBtoBASICUARTIC | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
射頻/高頻放大 （HF）
- 封裝形式：
直插封裝
- 極限工作電壓：
40V
- 最大電流允許值：
0.1A
- 最大工作頻率：
100MHZ
- 引腳數(shù)：
4
- 可代換的型號：
- 最大耗散功率：
0.2W
- 放大倍數(shù)：
β=400
- 圖片代號：
C-11
- vtest：
40
- htest：
100000000
- atest：
0.1
- wtest：
0.2
詳細參數(shù)
- 型號：
CIL234
- 功能描述：
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 100MA I(C) | TO-106
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
SMD |
196500 |
一級代理/全新現(xiàn)貨/長期供應! |
詢價 | ||
三星 |
24+ |
貼片層疊電感 |
4000 |
大量原裝現(xiàn)貨供應 |
詢價 | ||
SAMSUNG/三星 |
22+ |
SMD |
66000 |
原裝現(xiàn)貨樣品可售 |
詢價 | ||
SAMSUNG |
20+ |
電感器 |
150000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
SAMSUNG |
23+ |
SMD |
9342 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
SAMSUNG |
23+ |
SMD |
9342 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
SAMSUNG/三星 |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Samsung Electro-Mechanics |
25+ |
1206(3216 公制) |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
SAMSUNG/三星 |
23+ |
SMD |
66000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SAMSUNG/三星 |
15+ROHS |
SMD |
372400 |
一級質(zhì)量保證長期穩(wěn)定提供貨優(yōu)價美 |
詢價 |
