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HA245

OCTALBUSTRANSCEIVERSWITH3-STATEOUTPUTS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

HB245

SNx4AHCT245OctalBusTransceiversWith3-StateOutputs

1Features ?InputsareTTL-voltagecompatible ?Latch-upperformanceexceeds250mA perJESD17 ?ESDprotectionexceedsJESD22 –2000-VHuman-BodyModel(A114-A) –200-VMachineModel(A115-A) –1000-VCharged-DeviceModel(C101) ?OnproductscomplianttoMIL-PRF-38535, Allparameters

TITexas Instruments

德州儀器美國(guó)德州儀器公司

HC245

Octal3-StateNoninvertingBusTransceiver

Octal3-StateNoninvertingBusTransceiverHigh-PerformanceSilicon-GateCMOS TheSL74HC245isidenticalinpinouttotheLS/ALS245.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLS/ALSTTLoutputs. TheSL74HC245isa3-statenoninv

SLS

System Logic Semiconductor

HC245A

Octal3-StateNoninvertingBusTransceiver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HCS245MS

RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting

Description TheIntersilHCS245MSisaRadiationHardenedNon-InvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelogi

Intersil

Intersil Corporation

HCS245MS

RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200Kor1Mega-RAD(Si) ?Latch-UpFreeUnderAnyConditions ?Fanout(OverTemperatureRange) -BusDriverOutputs-15LSTTLLoads ?MilitaryTemperatureRange:-55oCto+125oC ?SignificantPowerReductionComparedtoLSTTLICs

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS245D

RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting

Description TheIntersilHCTS245MSisaRadiationHardenedNonInvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCTS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelog

Intersil

Intersil Corporation

HCTS245D

RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS245DMSR

RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting

Description TheIntersilHCTS245MSisaRadiationHardenedNonInvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCTS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelog

Intersil

Intersil Corporation

HCTS245DMSR

RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

晶體管資料

  • 型號(hào):

    CIL245

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    射頻/高頻放大 (HF)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    0.06A

  • 最大工作頻率:

    300MHZ

  • 引腳數(shù):

    4

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.2W

  • 放大倍數(shù):

    β=40

  • 圖片代號(hào):

    C-11

  • vtest:

    60

  • htest:

    300000000

  • atest:

    0.06

  • wtest:

    0.2

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SAMSUNG
24+
SMD
196500
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三星
24+
貼片層疊電感
4000
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SAMSUNG/三星
22+
SMD
66000
原裝現(xiàn)貨樣品可售
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SAMSUNG
20+
電感器
150000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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SAMSUNG
23+
SMD
9342
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SAMSUNG
23+
SMD
9342
專注配單,只做原裝進(jìn)口現(xiàn)貨
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SAMSUNG/三星
24+
NA
990000
明嘉萊只做原裝正品現(xiàn)貨
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Samsung Electro-Mechanics
24+
1206(3216 公制)
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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SAMSUNG/三星
23+
SMD
66000
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SAMSUNG/三星
15+ROHS
SMD
372400
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更多CIL245供應(yīng)商 更新時(shí)間2025-4-10 16:48:00