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DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號(hào):

    CL314

  • 制造商:

    MICRO-ELECTRONICS

  • 制造商全稱:

    Micro Electronics

  • 功能描述:

    SILICON TRANSISTORS

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100000
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HIROSE
2447
NA
100500
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SAMSUNG/三星
23+
SMD
144000
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三星
24+
2580
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SAMSUNG
23+
SMD
225000
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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SAMSUNG/三星
20+/21+
C1206
1000
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三星(SAMSUNG)
23+
SMD
100000
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三星
24+
貼片陶瓷電容
148000
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SAMSUNG
20+
電容器
7926
就找我吧!--邀您體驗(yàn)愉快問購元件!
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SAMSUNG/三星
23+
1206
50000
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更多CL314供應(yīng)商 更新時(shí)間2025-4-25 16:44:00