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INA740B

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments

德州儀器

INA740B

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

INA740BIREMR

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments

德州儀器

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

IQXO-740

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IRC740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF740

N-ChannelPowerMOSFETs,10A,350V/400V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF740

N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET

ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    CM740

  • 制造商:

    TE Connectivity

  • 功能描述:

    HF-17FRX25/NM - Bulk

  • 功能描述:

    Heat Shrink Tubing ST Polyethylene/Polyester Black

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