CP257

Small Signal Transistor NPN - High Voltage Darlington Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize20x20MILS DieThickness8.0MILS BaseBondingPadArea4.9x4.9MILS EmitterBondingPadArea6.4x6.4MILS TopSideMetalizationAl-30,000? BackSideMetalizationAu-16,000?

CP2660-7R

P Series Data Sheet 90 ??195 Watt DC-DC Converters

120...195WattDC-DCConverters Inputvoltageupto150VDC1to4isolatedoutputs3.3...96VDC4242VDCI/Oelectricstrengthtestvoltage ?Extremelyslimcase(4TE),fullyenclosed ?Extremelylowinrushcurrent,hotswappable ?Operatingambienttemperaturerange –40..

CP268

Power Transistor NPN - High Voltage Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize63x63MILS DieThickness10MILS BaseBondingPadArea9x12MILS EmitterBondingPadArea10x18MILS TopSideMetalizationAl-16,000? BackSideMetalizationAu-12,000?

CP273

Power Transistor NPN- Silicon Power Transistor Chip

PROCESSDETAILS DieSize68x68MILS DieThickness8.5MILS±0.6MILS BaseBondingPadArea17.7x10.2MILS EmitterBondingPadArea18.1x8.9MILS TopSideMetalizationAl-30,000? BackSideMetalizationAg-14,000?

CP275

Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip

PowerTransistor 4.0AmpNPNSiliconPowerTransistorChip PROCESSDETAILS DieSize105x105MILS DieThickness8.5MILS BaseBondingPadArea32x19MILS EmitterBondingPadArea28x22MILS TopSideMetalizationAl

CP28-2

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES ?solidstatedevice ?2-stagecooler ?precisetemperaturecontrol ?quietoperation

CP283

Power Transistor NPN - Silicon Power Transistor Chip

PROCESSDETAILS DieSize68x68MILS DieThickness9.5MILS BaseBondingPadArea18x11MILS EmitterBondingPadArea18x12MILS TopSideMetalizationAl-45,000? BackSideMetalizationTi/Ni/Ag-(3000?,10,000?,10,000?)

CP28372-2

PELTIER MODULE

DESCRIPTION:PELTIERMODULE FEATURES ?solidstatedevice ?2-stagecooler ?precisetemperaturecontrol ?quietoperation

CP285

Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip

PROCESSDETAILS DieSize105x105MILS DieThickness9.5MILS BaseBondingPadArea32x22MILS EmitterBondingPadArea33x24MILS TopSideMetalizationAl-45,000? BackSideMetalizationTi/Ni/Ag-(3000?,10,000?,10,000?)

CP287

Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip

PROCESSDETAILS DieSize130x130MILS DieThickness9.5MILS BaseBondingPadArea37x20MILS EmitterBondingPadArea38x20MILS TopSideMetalizationAl-45,000? BackSideMetalizationTi/Ni/Ag-(3000?,10,000?,10,000?)