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FMMT459TC

500VSiliconNPNhighvoltageswitchingtransistor

Summary V(BR)CEV>500V V(BR)ECV>6V Ic(cont)=150mA Vce(sat)=70mV@50mA Description Thisnewhighvoltagetransistorprovidesuserswithveryefficientperformance,combininglowVCE(SAT)highHfetogiveextremelylowonstatelossesat500Voperation,makingitidealforuseinhi

DIODES

Diodes Incorporated

FMMT459TC

500VSiliconNPNhighvoltageswitchingtransistor

Zetex

Zetex Semiconductors

HMC459

GaAsPHEMTMMICPOWERAMPLIFIER,DC-18GHz

Hittite

Hittite Microwave Corporation

HMC459

GaAsPHEMTMMICPOWERAMPLIFIER,DC-18.0GHz

Hittite

Hittite Microwave Corporation

HMC459

GaAsPHEMTMMICPOWERAMPLIFIER,DC-18GHz

Hittite

Hittite Microwave Corporation

HMC459

TelecomInfrastructure

MICROSS

Micross Components

HMC459

TelecomInfrastructure

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HMC-459

ActiveBiasControllerHighCurrent

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HMC-ALH459

GaAsHEMTLOWNOISEAMPLIFIER,71-86GHz

GeneralDescription TheHMC-ALH459isathreestageGaAsHEMTMMICLowNoiseAmplifier(LNA)whichoperatesbetween71and86GHz.TheHMC-ALH459features14dBofsmallsignalgain,4.5dBofnoisefigureandanoutputpowerof+7dBmat1dBcompressionfromtwosupplyvoltagesat2.1Vand2.4

Hittite

Hittite Microwave Corporation

ISCN459T

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=240A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·SynchronousRectificationinSMPS ·Switchingconverters,motordriver,relaydriver ·Pow

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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