CS2N60F中文資料華潤微電子數(shù)據(jù)手冊PDF規(guī)格書

General Description：

CS2N60F A9H, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor can

be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220F, which accords with the RoHS standard..

Features：

l Fast Switching

l Low ON Resistance(Rdson≤4.5?)

l Low Gate Charge (Typical Data:8.5nC)

l Low Reverse transfer capacitances(Typical:5.4pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger