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IRFF9130

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRFNJ9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9130

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9130

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9130

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8.3A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFY9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY9130C

POWERMOSFETTHRU-HOLE(TO-257AA)100V,P-CHANNELHEXFET?MOSFETTECHNOLOGY

PartNumberRDS(on)IDEyelets IRFY9130C0.3?-11.2ACeramic IRFY9130CM0.3?-11.2ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRF

International Rectifier

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23
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2023+
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8800
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QQ咨詢
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81
全新原裝 研究所指定供貨商
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16
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20+
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16
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21+
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19
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23+
DIP8
3755
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DIP8
10000
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CS
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247
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更多CS9130S供應商 更新時間2025-4-26 14:06:00

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