CY14B108N-BA25XC中文資料賽普拉斯數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Functional Description

The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Features

■ 20 ns, 25 ns, and 45 ns Access Times

■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N)

■ Hands off Automatic STORE on Power Down with only a Small Capacitor

■ STORE to QuantumTrap Nonvolatile Elements Initiated by Software, Device Pin, or AutoStore on Power Down

■ RECALL to SRAM Initiated by Software or Power Up

■ Infinite Read, Write, and RECALL Cycles

■ 200,000 STORE Cycles to QuantumTrap

■ 20 year Data Retention

■ Single 3V +20, -10 Operation

■ Commercial and Industrial Temperatures

■ 48-Ball FBGA and 44/54-Pin TSOP-II Packages

■ Pb-free and RoHS Compliant