CY15B116QI集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

Features

? 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8

- Virtually unlimited endurance 1000 trillion (1015) read/writes

- 151-year data retention (see “Data retention and endurance” on page 27)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

? Fast serial peripheral interface (SPI)

- Up to 20 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

? Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

? Device ID and serial number

- Manufacturer ID and Product ID

- Unique device ID

- Serial number

? Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

? Low-power consumption

- 1.50 mA (typ) active current at 20 MHz

- 14 μA (typ) standby current

- 1.10 μA (typ) Deep Power Down mode current

- 0.1 μA (typ) Hibernate mode current

- 1.90 mA (typ) Inrush current during power up

? Low-voltage operation

- CY15V116QI: VDD = 1.71 V to 1.89 V

- CY15B116QI: VDD = 1.8 V to 3.6 V

? Commercial operating temperature: 0 °C to +70 °C

? 24-ball fine pitch ball grid array (24-ball FBGA)

? Restriction of hazardous substances (RoHS) compliant