CY15V104QN集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

Features

? 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8

- Virtually unlimited endurance of 100 trillion (1014) read/write cycles

- 151-year data retention (see “Data retention and endurance” on page 24)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

? Fast serial peripheral interface (SPI)

- Up to 50 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

? Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

? Device ID and serial number

- Device ID includes manufacturer ID and product ID

- Unique ID

- Serial number

? Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to 3 standard reflow soldering cycles

? Low-power consumption

- 400 μA (typ) active current at 1 MHz

- 3.7 mA (typ) active current at 40 MHz

- 2.7 μA (typ) standby current

- 1.1 μA (typ) Deep Power Down mode current

- 0.1 μA (typ) Hibernate mode current

? Low-voltage operation:

- CY15V104QN: VDD = 1.71 V to 1.89 V

- CY15B104QN: VDD = 1.8 V to 3.6 V

? Automotive-A operating temperature: –40°C to +85°C

? AEC-Q100 grade 3 compliant

? 8-pin small outline integrated circuit (SOIC) package

? Restriction of hazardous substances (RoHS) compliant