CY15V116QN集成電路（IC）的存儲器規(guī)格書PDF中文資料

Features

? 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8

- Virtually unlimited endurance of 1000 trillion (1015) read/write

- 151-year data retention (see “Data retention and endurance” on page 24)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

? Fast serial peripheral interface (SPI)

- Up to 40 MHz frequency

- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)

? Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

? Device ID and Serial number

- Manufacturer ID and Product ID

- Unique Device ID

- Serial number

? Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

? Low-power consumption

- 2.7 mA (typ) active current at 40 MHz

- 14 μA (typ) standby current

- 1.10 μA (typ) deep power-down mode current

- 0.1 μA (typ) hibernate mode current

? Low-voltage operation

- : VDD = 1.71 V to 1.89 V

- CY15B116QN: VDD = 1.8 V to 3.6 V

? Industrial operating temperature: ?40°C to +85°C

? Packages

- 24-ball fine pitch ball grid- array (24-ball FBGA)

? Restriction of hazardous substances (RoHS) compliant