CY62147DV18LL-55BVXI中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description[1]

The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life? (MoBL?) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption.

Features

? Very high speed: 55 ns and 70 ns

? Wide voltage range: 1.65V – 2.25V

? Pin-compatible with CY62147CV18

? Ultra-low active power

— Typical active current: 1 mA @ f = 1 MHz

— Typical active current: 6 mA @ f = fmax

? Ultra low standby power

? Easy memory expansion with CE, and OE features

? Automatic power-down when deselected

? CMOS for optimum speed/power

? Packages offered 48-ball BGA