CYRS15B101N-GGMB中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Features

? 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8)

- High-endurance 10 trillion (1013) reads/writes

- 121 year data retention (see “Data retention and endurance” on page 13)

- Infineon instant non-volatile write technology

- Page-mode operation for 30 ns cycle time

- Advanced high-reliability ferroelectric process

? SRAM compatible

- Industry-standard (64K × 16)/(128K × 8) SRAM pinout

? 60 ns access time, 90 ns cycle time

? Advanced features

- Software-programmable block write-protect

? Low power consumption (pre/post 150 krad TID radiation)

? 20 mA/20 mA active current at 25 MHz

? 700 μA/5 mA standby current

? 20 μA/8 mA sleep mode current

? Low-voltage operation: VDD = 2.0 V to 3.6 V

? Military temperature: –55°C to +125°C

? 44-pin ceramic TSOP package